Photoelectric conversion device and solid-state imaging device
US7952156B2 · kind B2 · utility
5Cited by
25References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2006 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | May 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/1135
Abstract
A photoelectric conversion device comprising a photo-electric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made incident from an upper part of the second electrode layer into the photoelectric conversion layer; the photoelectric conversion layer generates a charge containing an electron and a hole corresponding to the incident light from the upper part of the second electrode layer; and the first electrode layer works as an electrode for extracting the hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.