Semiconductor light-emitting device

US7953134B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Ming-Ta Chin · Hsinchu, TW
• Kuo-Feng Huang
• Ping Shen · Shanghai, CN
• Ching-Jen Wang · Taipei, TW
• Shih-Pang Chang · Hsinchu, TW

Key dates

• Filing date: Dec 31, 2008
• Grant date: May 31, 2011
• Expiry date: May 14, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.