Patent · US Active

Method and system for lithography simulation and measurement of critical dimensions

US7953582B2 · kind B2 · utility

2Cited by

8References

24Claims

0Family size

Assignee

Cadence Design Systems, Inc. · US

Inventors

Daisuke Hara · Tochigi, JP
Takashi Mitsuhashi · Fujisawa, JP
Zhigang Wu · Suzhou, CN

Key dates

Filing date	Nov 21, 2006
Grant date	May 31, 2011
Priority date	—
Expiry date	Nov 30, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/68
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method and system for lithography simulation is disclosed. The method and system specify a subject region of a lithography image with a CD marker, specify a threshold intensity over the lithography image, specify a gradient to a threshold value of the threshold intensity, and calculate a sensitivity or ratio of change of an image boundary of the lithography image to lithography process variation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.