Patent · US Active

Method and system for forming a silicon ingot using a low-grade silicon feedstock

US7955433B2 · kind B2 · utility

3Cited by
6References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 26, 2007
Grant dateJun 7, 2011
Priority date
Expiry dateOct 21, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1024

Abstract

Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.