Method for producing crystallized silicon as well as crystallized silicon

US7955582B2 · kind B2 · utility

Assignee

• SCHOTT SOLAR AG · DE

Inventors

• Albrecht Seidl · Niedernberg, DE
• Ingo Schwirtlich · Miltenberg, DE

Key dates

• Filing date: Dec 14, 2007
• Grant date: Jun 7, 2011
• Expiry date: Nov 19, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/10
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone, by means of which the oxygen content of the crystallized silicon is increased. From 50 to 250 ppm of vapor water is added to the inert gas, and the inert gas has an oxygen, CO and/or CO2 content of less than 20 ppm total.