Method of producing semiconductor optical device
US7955880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the stacked semiconductor layer, the silicon oxide film having a predetermined film stress and a predetermined thickness; a third step of forming a strip-shaped groove in the silicon oxide film by etching the silicon oxide film, using a resist pattern formed on the silicon oxide film, until a surface of the stacked semiconductor layer is exposed; and a fourth step of growing a second III-V group compound semiconductor layer in the groove using the silicon oxide film as a selective mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.