Organic field effect transistor and method of manufacturing the same
US7955915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Sep 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.