Method of light induced plating on semiconductors
US7955977B2 · kind B2 · utility
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1References
9Claims
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Key dates
| Filing date | Jun 23, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Feb 12, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.