Enhanced method of forming nickel silicides
US7955978B2 · kind B2 · utility
0Cited by
18References
7Claims
0Family size
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Key dates
| Filing date | Aug 25, 2010 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Aug 25, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.