Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
US7955995B2 · kind B2 · utility
87Cited by
17References
13Claims
0Family size
Assignee
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Key dates
| Filing date | May 18, 2007 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Jun 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×1011 cm−3 or more and the electron temperature is 1.5 eV or less in an atmosphere including oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.