Light emitting diode

US7956369B2 · kind B2 · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Meredith Reed · Perry Hall, US
• Michael Wraback · Germantown, US
• Paul H. Shen · North Potomac, US

Key dates

• Filing date: May 7, 2009
• Grant date: Jun 7, 2011
• Expiry date: Oct 12, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light emitting device comprising: a polar template; a p-type layer grown thereon; the p-type layer having a first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector that is larger than the first polarization vector; the n-type layer and p-type layer forming an interface. Another preferred embodiment light emitting device comprises a polar template; an n-type layer grown on the template; the n-type layer having a first polarization vector having a first projection relative to a growth direction; a p-type layer grown on the n-type layer having a second polarization vector that is larger than the first polarization vector. In both embodiments, the first polarization vector in the p-layer and second polarization vector in the n-layer create discontinuity at the interface resulting in a negative charge appearing at the interface.