Composition for photoresist stripper and method of fabricating thin film transistor array substrate
US7956393B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Sep 21, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Sep 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.