Photodiode for multiple wavelength operation
US7956432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Jul 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer, wherein the multi-layer ARC comprises at least two different dielectric layers. A layer resistant to oxide etch is above a peripheral portion the multi-layer ARC. Further layers are above the layer resistant to oxide etch, and thereby above the peripheral portion the multi-layer ARC. A window extends down to the multi-layer ARC. A photodiode region is formed by a pn-junction of the first semiconductor type surface region and the second semiconductor type surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.