Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same
US7956947B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Dec 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.