Pattern forming method, pattern formed thereby, mold, processing apparatus, and processing method
US7960090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2008 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Aug 22, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A pattern forming method includes a step of forming a pattern of a resist on a surface of a thin film formed on the base material; a step of forming a reverse layer on the pattern of the resist; a step of forming a reverse pattern, of the reverse layer complementary to the pattern of the resist by removing the resist after removing the reverse layer to expose a surface of the resist; a step of forming a hard mask layer including the thin film, on which the reverse layer is formed, by etching the thin film through the reverse pattern of the reverse layer as a mask; and a step of etching the base material through, as a mask, the hard mask layer on which the reverse layer remains or the hard mask layer on which the reverse layer has been removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.