Method for fabricating high-speed thin-film transistors
US7960218B2 · kind B2 · utility
283Cited by
33References
20Claims
0Family size
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Key dates
| Filing date | Sep 8, 2006 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Apr 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides methods for fabricating high speed TFTs from silicon-on-insulator and bulk single crystal semiconductor substrates, such as Si(100) and Si(110) substrates. The TFTs may be designed to have a maximum frequency of oscillation of 3 GHz, or better.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.