Radiofrequency or hyperfrequency micro-switch structure and method for producing one such structure
US7960662B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 31, 2007 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/127
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The micro-switch structure comprises, on a substrate 1 coated with a passivation layer 2, a first signal line LS-IN and a second signal line LS-OUT disposed in the projected extension of one another, separated by a switching region 10; a control electrode 3 in said region, a dielectric material 4 with high relative permittivity invariant in frequency, disposed on the control electrode in such a manner that, between the two signal lines, the control electrode is wider on either side and, in the orthogonal direction, the dielectric protrudes on either side of the control electrode and rests on the passivation layer; parallel ground lines, disposed symmetrically on either side of the signal lines and formed on a topological level separated from that of the signal lines by at least one insulating layer made of a material different from that of the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.