Edge-contacted vertical carbon nanotube transistor
US7960713B2 · kind B2 · utility
15Cited by
21References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2008 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Jan 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.