Interfering excitations in FQHE fluids
US7960714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Jul 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
Abstract
An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.