Transistor, transistor circuit, electrooptical device and electronic apparatus
US7960720B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 22, 2008 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Mar 31, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
Abstract
A transistor including a first gate electrode, a second gate electrode, a first gate insulating layer disposed between the first gate electrode and the second gate electrode, a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material, an organic semiconductor layer disposed between the first interlayer and the second gate electrode, a second gate insulating layer disposed between the organic semiconductor layer and the second gate electrode, and a source electrode and a drain electrode disposed between the first interlayer and the second gate insulating layer and injecting carriers into the organic semiconductor layer, wherein an ambipolar property is imparted to a part of the organic semiconductor layer that contacts with the first interlayer under an action of the first interlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.