Stacked electro-optically active organic diode with inorganic semiconductor connection layer

US7960723B2 · kind B2 · utility

Assignee

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventor

• Michael Buechel · Eindhoven, NL

Key dates

• Filing date: Jul 12, 2007
• Grant date: Jun 14, 2011
• Expiry date: Mar 2, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K50/19

Abstract

A stacked electro-optically active organic diode has an anode electrode (102), a cathode electrode (162), a first electro-optically active organic layer (110) arranged between the electrodes (102, 162), and a second electro-optically active organic layer (130) arranged between said first active organic layer (110) and said cathode (162). A low electron affinity layer (120) is arranged between the first electro-optically active organic layer (110) and the second electro-optically active organic layer (130), and is formed of a first transparent inorganic semi-conductor material. A high electron affinity layer (121) is arranged between said second electro-optically active organic layer (130) and the low electron affinity layer (120), and is formed of a second transparent inorganic semiconductor material, wherein said second transparent inorganic semiconductor material has a higher electron affinity than said first inorganic semiconductor material. The low and high affinity layers (120, 121) constitute a connection layer of only two semiconductor (sub-)layers which allow for transparent, thick layers, and as a result the diode can be both efficient and reliable.