Light-emitting device structure and semiconductor wafer structure with the same

US7960749B2 · kind B2 · utility

Assignee

• Huga Optotech Inc. · TW

Inventor

• Shu Hui Lin · Zhuolan Township, TW

Key dates

• Filing date: Apr 10, 2009
• Grant date: Jun 14, 2011
• Expiry date: May 6, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.