Patent · US Active

3D backside illuminated image sensor with multiplexed pixel structure

US7960768B2 · kind B2 · utility

3Cited by
3References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 17, 2008
Grant dateJun 14, 2011
Priority date
Expiry dateSep 13, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/813

Abstract

A three-dimensional pixel array, a method of manufacturing a pixel array and an imager including the three-dimensional pixel array. The three-dimensional array includes multiple groups of pixels, each group of pixels including a first layer and a second layer. The first layer includes multiple photosensitive elements, one per pixel in the group, at least one floating diffusion region connected to each photosensitive element in the group via at least one respective transfer gate per pixel and multiple transfer gate lines, at least two transfer gate lines connected to each respective transfer gate in each row of pixels. The second layer includes at least a rest transistor per group and a source follower transistor coupled to the shared floating diffusion in the first layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.