Memory devices including dielectric thin film and method of manufacturing the same
US7960774B2 · kind B2 · utility
3Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2006 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.