Transistor with floating gate and electret
US7960776B2 · kind B2 · utility
86Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2007 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Apr 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0411
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor includes a field effect transistor having a source, drain, a control gate and floating gate, wherein the floating gate has an extended portion extending away from the control gate. A sensing gate is capacitively coupled to the extended portion of the floating gate. A polymer electret sensing coating is electrically coupled to the sensing gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.