Semiconductor integrated circuit devices
US7960785B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 19, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Dec 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/836
Abstract
A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity layer formed in at least a portion of the high-voltage device region and coupled to a first voltage; a second buried impurity layer formed in at least a portion of the low-voltage device region and coupled to a second voltage less than the first voltage; and a well formed on the second buried impurity layer in the low-voltage device region and coupled to a third voltage less than the second voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.