MEMS structure with suspended microstructure that includes dielectric layer sandwiched by plural metal layers and the dielectric layer having an edge surrounded by peripheral metal wall
US7960805B2 · kind B2 · utility
2Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Jan 5, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Aug 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R31/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An MEMS structure and a method of manufacturing the same are provided. The MEMS structure includes a substrate and at least one suspended microstructure located on the substrate. The suspended microstructure includes a plurality of metal layers, at least one dielectric layer, and at least one peripheral metal wall. The dielectric layer is sandwiched by the metal layers, and the peripheral metal wall is parallel to a thickness direction of the suspended microstructure and surrounds an edge of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.