RF power amplifier integrated circuit and unit cell
US7961052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Dec 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A novel RF power amplifier integrated circuit (PA IC), unit cell, and method for amplifying RF signals are disclosed. One embodiment of a PA IC includes at least two linear arrays comprising transistor device units, and at least one linear array comprising capacitors. The transistor device units include source nodes that are jointly coupled to a source bus, and selected gate nodes that are jointly coupled to a gate bus. First electrodes of the capacitors are also jointly coupled to the source bus, and second electrodes of the capacitors are jointly coupled to the gate bus. Each linear array comprising capacitors is disposed between at least two linear arrays comprising transistor device units. In one embodiment, the PA IC includes unit cells. In some embodiments, each unit cell comprises two transistor device units and one or more capacitors. The capacitors are disposed between the transistor device units. The unit cells are disposed in linear arrays so that the transistor device units are disposed in linear arrays and the capacitors are disposed in linear arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.