Method for deleting data from NAND type nonvolatile memory
US7961525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Jun 25, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for deleting data from the NAND-type nonvolatile memory, charges stored in a charge accumulating layer of a first nonvolatile memory element are released by applying a first potential to a bit line and a source line, a second potential to a control gate of the first nonvolatile memory element, and a third potential which is different from the second potential to a control gate of a second nonvolatile memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.