Method for manufacturing nitride semiconductor light-emitting element
US7964424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2008 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Aug 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.