Method for dopant diffusion
US7964435B2 · kind B2 · utility
1Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2007 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Jul 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the size of the diffusion windows in the diffusion mask and the proximity of the diffusion windows to a dopant sink. In some embodiments, the diffusion process is conducted in an epi-reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.