Method and system for spatially selective crystallization of amorphous silicon
US7964453B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2009 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | May 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The manufacturing methodology to produce polycrystalline silicon in time and cost efficient manner uses a spatially selective crystallization approach to greatly reduce the amount of energy delivered to the work surface. The amorphous silicon film is subjected to laser radiation substantially exclusively at localized areas where TFTs are to be formed. The source of radiation is a copper vapor laser which produces a highly stable radiation in a visible spectrum with an energy sufficient to convert amorphous silicon into polysilicon in 1-3 shots. The optic system delivers the homogenized, conditioned and focused laser beam to the area of interest in a controlled manner. Single or multi-laser beam arrangements, as well as different shapes and sizes of laser beam spots are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.