Method of manufacturing semiconductor device
US7964462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2008 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Apr 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device. The method includes: forming a charge storage layer on a substrate on which a gate insulating layer is formed; forming a first metal oxide layer on the charge storage layer using a first reaction source including a metal oxide layer precursor and a first oxidizing agent and changing the first metal oxide layer to a second metal oxide layer using a second reaction source including a second oxidizing agent having larger oxidizing power than the first oxidizing agent and repeating the forming of the first metal oxide layer and the changing of the first metal oxide layer to the second metal oxide layer several times to form a blocking insulating layer; and forming an electrode layer on the blocking insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.