Method of manufacturing semiconductor device having resistor formed of a polycrystalline silicon film
US7964469B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 13, 2007 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Jun 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
In a method of manufacturing a semiconductor device, a first oxide film is formed in a convex shape on a field insulating film, a polycrystalline silicon film is formed on the first oxide film, and impurities are introduced into the polycrystalline silicon film. The polycrystalline silicon film into which the impurity is introduced is patterned so that a portion above the convex-shaped first oxide film becomes a resistance region of the resistor. A second oxide film is then formed on the patterned polycrystalline silicon film followed by the formation of a third oxide film on the second oxide film. The third oxide film and parts of the second oxide film and the polycrystalline silicon film are then removed to form a planarized surface including surface portions of the second oxide film and the polycrystalline silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.