Deposition of group III-nitrides on Ge
US7964482B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 9, 2007 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Nov 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02614
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3), preferably with hexagonal symmetry. The method comprises heating the substrate (1) to a nitridation temperature between 400° C. and 940° C. while exposing the substrate (1) to a nitrogen gas flow and subsequently depositing the group III-nitride layer, e.g. GaN layer (5), onto the Ge surface (3) at a deposition temperature between 100° C. and 940° C. By a method according to embodiments of the invention, a group III-nitride layer, e.g. GaN layer (5), with good crystal quality may be obtained. The present invention furthermore provides a group III-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.