Patent · US Active

Epitaxial substrate, method of making same and method of making a semiconductor chip

US7964890B2 · kind B2 · utility

4Cited by

9References

13Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Andreas Plössl · Regensburg, DE
Gertrud Kräuter · Regensburg, DE
Rainer Butendeich · Regensburg, DE

Key dates

Filing date	Sep 27, 2006
Grant date	Jun 21, 2011
Priority date	—
Expiry date	Mar 11, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/811
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate, and a method of making the epitaxial substrate. Further described is a method of making a thin-film semiconductor chip, particularly an LED, wherein an epitaxial substrate is prepared, wherein at least one LED structure is grown on said epitaxial substrate and the LED structure is bonded to an acceptor substrate, and wherein the semiconductor wafer is released by at least partially destroying the sacrificial layer, and the at least one LED structure is singulated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.