Semiconductor device and method for manufacturing same
US7964930B2 · kind B2 · utility
3Cited by
9References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2005 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Sep 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A semiconductor device includes a trench MOS barrier Schottky diode having an integrated PN diode and a method is for manufacturing same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.