Lamb wave device
US7965015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2009 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Dec 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02228
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
There is provided a lamb wave device with small variations in frequency, the device including: a piezoelectric thin film; an IDT electrode which is provided on a main surface of the piezoelectric thin film; and a support structure which supports a laminate of the IDT electrode and the piezoelectric thin film, and is formed with a cavity that isolates the laminate, wherein a film thickness h of the piezoelectric thin film and a pitch p of a finger of the IDT electrode are selected such that a lamb wave is excited at a target frequency, the lamb wave making dispersibility of a sonic velocity v with respect to the film thickness h of the piezoelectric thin film small.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.