Patent · US Active

High gain read circuit for 3D integrated pixel

US7965329B2 · kind B2 · utility

20Cited by
3References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 9, 2008
Grant dateJun 21, 2011
Priority date
Expiry dateSep 30, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/803

Abstract

An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.