Patent · US Active

Power semiconductor module and method for its production

US7965516B2 · kind B2 · utility

0Cited by

9References

17Claims

0Family size

Assignee

SEMIKRON ELEKTRONIK GMBH & CO. KG · DE

Inventors

Jürgen Steger · Hiltpoltstein, DE
Marco Lederer · Hirschaid, DE

Key dates

Filing date	Jul 20, 2009
Grant date	Jun 21, 2011
Priority date	—
Expiry date	Jul 20, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/166
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor module that includes a substrate having at least one power semiconductor element; a heat sink for dissipation of heat from the at least one power semiconductor element and a housing having a cutout which is arranged on a lower face of the housing facing the heat sink and holds the substrate; and to a method for production of such power semiconductor modules. The power semiconductor module has at least one holding element, which engages in a recess, which is associated with the at least one holding element, on the lower face of the housing and is designed such that it limits any movement of the substrate in the direction of the lower face of the housing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.