Monolithic semiconductor laser
US7965753B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 23, 2006 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Dec 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.