Methods of transferring a lamina to a receiver element
US7967936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2008 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Sep 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for bonding a donor wafer to a receiver element and transferring a lamina from the donor wafer to the receiver element are disclosed herein. The donor wafer may be, for example, a monocrystalline silicon wafer with a thickness of from about 300 microns to about 1000 microns, and the lamina may be may be less than 100 microns thick. The receiver element may be composed of, for example, metal or glass, and the receiver element may have dissimilar thermal expansion properties from the lamina. Although the lamina and the receiver element may have dissimilar thermal expansion properties, the methods disclosed herein maintain the integrity of the bond between the lamina and the receiver element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.