Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same
US7968000B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 29, 2009 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | May 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.