White light emitting diode
US7968005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2005 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jan 27, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B20/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The inventive white-light emitting diode is characterized in that it comprises a source emitting radiation whose wavelength band ranges from 370 to 420 nm, a first blue and red-light emitting phosphor of formula Ba3(1-x)Eu3xMg1-yMnySi2O8 (1), wherein 0 < x 0,3 and 0 < y 0,3 and a second green-light emitting phosphor. In another embodiment, said diode comprises the same source and a single phosphor whose chemical composition is Ba3(1-x)Eu3xMg1-yMnySi2O8, wherein 0 < x 0,3 et 0 < y 0,3 and which is embodied in the form of a mixture of at least Ba2SiO4, Ba2MgSi2O7 and Ba3MgSi2O8 phases. The inventive diode can be used for a lighting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.