Near field exposure mask, method of forming resist pattern using the mask, and method of producing device
US7968256B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2007 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Apr 25, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l0; a light shielding layer l2 formed above the transparent mask matrix l0 and containing silicon; a reflective layer l1 formed between the transparent mask matrix l0 and the light shielding layer l2; and an opening pattern provided in the reflective layer l1 and the light shielding layer l2 and being less in size than an exposure wavelength λ (nm), wherein the reflectance at an interface between the transparent mask matrix l0 and the reflective layer l1 is higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.