Manufacturing method of liquid crystal display device
US7968357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2010 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | May 13, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13685
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.