Fabricating method of thin film transistor array substrate
US7968367B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2010 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Aug 12, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabricating method of a TFT array substrate includes following steps: providing a substrate having a pixel region and a bonding pad region surrounding the pixel region; forming a patterned polysilicon layer within the pixel region on the substrate; forming a first patterned insulating layer to cover the patterned polysilicon layer; forming a first patterned transparent conductive layer on the first patterned insulating layer; forming a first metal layer on the first patterned transparent conductive layer; forming a second patterned insulating layer to cover the first metal layer; forming a second patterned transparent conductive layer on the second patterned insulating layer; forming a second metal layer on the second patterned transparent conductive layer; forming a third patterned insulating layer to cover the second metal layer; and forming a third patterned transparent conductive layer on the third patterned insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.