Method of manufacturing a field effect transistor having an oxide semiconductor
US7968368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2010 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jan 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a field effect transistor, which has high alignment accuracy between a gate electrode and source and drain electrodes and can provide a transparent device at a low cost. Since a patterned light blocking film is formed on the rear side of a substrate and used as a photomask for forming a gate electrode pattern and a source and drain electrode pattern on the front side of the substrate, the number of photomasks is reduced, and self-alignment between the gate electrode and the source and drain electrodes is carried out, thereby improving the alignment accuracy of these electrodes. Thereby, a method of manufacturing a high-accuracy low-cost field effect transistor can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.