Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method
US7968461B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2004 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Nov 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. Therefore, the invention provides a method for narrowing (miniaturizing) the line width according to a method different from a conventional method. A region to be liquid-repellent is formed and further, a region to be lyophilic is formed selectively in the region to be liquid-repellent in a surface for forming a pattern, before forming a desired pattern. After that, a pattern for a wiring or the like is formed in the lyophilic region by a dropping method typified by an ink-jetting method for dropping a composition including a conductive material for the wiring or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.