Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer
US7968463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2007 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Sep 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.